发明名称 Artificially tilted via connection
摘要 A semiconductor integrated circuit with tilted via connection and related method are provided, the circuit including a via layer having at least one tilted via, and a wireway layer having at least one elongated wireway disposed above the via layer, wherein the wireway connects to and partially overlaps the tilted via; and the method including forming a via layer, patterning a via trench in the via layer, forming a wireway layer, patterning an elongated wireway in the wireway layer, etching the patterned wireway and the patterned via, and filling the etched wireway and the etched via with a conductive material, wherein the filled wireway partially overlaps the filled via.
申请公布号 US7863185(B2) 申请公布日期 2011.01.04
申请号 US20080166384 申请日期 2008.07.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 OH HYEOKSANG
分类号 H01L21/00 主分类号 H01L21/00
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