发明名称 |
Method for manufacturing a GaN based optical device |
摘要 |
The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGaInN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.
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申请公布号 |
US7863178(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20050542485 |
申请日期 |
2005.07.15 |
申请人 |
EPIVALLEY CO., LTD.;SAMSUNG LED CO., LTD. |
发明人 |
YOO TAE-KYUNG;PARK JOONG SEO;PARK EUN HYUN |
分类号 |
H01L21/3205;C23C16/30;C30B25/02;C30B29/40;H01L21/205;H01L33/00 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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