发明名称 |
Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device |
摘要 |
Example embodiments relate to a method of forming a germanium (Ge) silicide layer, a semiconductor device including the Ge silicide layer, and a method of manufacturing the semiconductor device. A method of forming a Ge silicide layer according to example embodiments may include forming a metal layer including vanadium (V) on a silicon germanium (SiGe) layer. The metal layer may have a multiple-layer structure and may further include at least one of platinum (Pt) and nickel (Ni). The metal layer may be annealed to form the germanium silicide layer. The annealing may be performed using a laser spike annealing (LSA) method.
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申请公布号 |
US7863142(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20080078750 |
申请日期 |
2008.04.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MOON CHANG-WOOK;YANG HYUN-DEOK;JEON JOONG S.;RHEE HWA-SUNG;LEE NAE-IN;CHEN WEIWEI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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