METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device manufacturing method is provided to restrain the leak current of a semiconductor device by improving the crystalline of a bottom electrode by implementing the heat treatment for the bottom electrode before depositing a dielectric layer. CONSTITUTION: A first interlayer insulating film(120) is formed on a substrate(100). The imbedded contact plugs(130a, 130b, 130c) are formed within the first interlayer insulating film. A second interlayer insulation layer is formed on the first interlayer insulating film and the imbedded contact plug. A contact hole exposing the imbedded contact plug is formed within the second interlayer insulation film.