| 摘要 |
PURPOSE: A semiconductor memory device and a bit-line sensing method using the same are provided to prevent the generation of column fail by disconnecting a memory cell block and a sense amplifier in a charge sharing process. CONSTITUTION: Sense amplifiers(SA<m-1>, SA<m>) sense a voltage difference between the bit-line and the bit-bar-line of a memory cell block. Switching parts(SASL1<m-1>, SASL2<m-1>, SASH1<m>, SASH2<m>) are turned on or turned off according to a bit-line separating signal. The switching parts selectively connect memory cell blocks and the sense amplifiers. A bit-line separation controlling part(500) supplies the bit-line separating signal to the switching parts. A timing controlling part is enabled by an active command signal. |
