| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve the on-current of a transistor by making the resistance of each member small. CONSTITUTION: Semiconductor layers(106a,106b) comprise a channel forming region and a conductive region. Metal compound domains(122a,122b) comprise the metal compound of a semiconductor. Gate isolation layers(110a,110b) are contacted to a channel forming region. Gate electrodes(112a,112b) are contacted to the gate isolation layer.</p> |
