METHOD FOR FABRICATING CONTACTS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device contact forming method is provided to restrain the writing restoration time defect and improve the operation speed of a component by reducing the contact resistance by injecting the nitride and oxygen gas into the doped polysilicon. CONSTITUTION: A contact(400) passing through the interlayer dielectric layer on a semiconductor substrate(100) is formed including the poly-silicon. The impurity is doped in polysilicon. The polysilicon contact is activated by implementing heat treatment while offering nitride gas and oxygen gas on the polysilicon. The poly-silicon is deposited with the poly-silicon doped with the phosphorus.