| 摘要 |
PURPOSE: A fuse structure for a high integrated semiconductor device is provided to prevent the malfunction of a semiconductor device after a blowing process by reducing the thickness of conductive materials comprising the fuse. CONSTITUTION: A fuse(220) comprises first and second regions connected to two voltage terminals(201,203). The first and second regions are different from a blowing region. The first region(230) is comprised of two kinds of metal layers or more. The second region(240) is comprised of one metal layer. The first region includes a first metal layer(226) made of first metal materials and a second metal layer(232) formed on the upper side of the first metal layer. The thickness of the part of the first metal layer under the second metal layer is thinner than the second region.
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