| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the height of a gate by reducing a gate loss using a conductive layer instead of a hard mask nitrogen layer as an etch barrier in a contact hole etch process and a CMP process. CONSTITUTION: Conductive patterns are formed on a substrate(30). A contact hole is formed on an interlayer insulation layer to expose the substrate between conductive patterns. A first conductive layer is formed on a front surface including the contact hole. A contact plug(38A) is isolated inside the contact hole by etching the first conductive layer to expose the upper surface of the conductive pattern. The part of the conductive pattern is removed to position the upper surface of the conductive pattern under the upper surface of the interlayer insulation layer. An insulation layer is formed on the part without the conductive pattern. |
