| 摘要 |
PURPOSE: A program method is provided to reduce operation errors by applying a positive source back bias voltage to a common source line, thereby uniformizing a threshold voltage level. CONSTITUTION: A plurality of word lines are arranged between a drain selected line and a source selected line. A memory cell connected to a word line is electrically connected to a common source line(S401). A first program loop is executed. A threshold voltage increases over a first level by an interference phenomenon by executing a second program loop(S403). A first program operation is executed. A first verification operation is executed(S402). |
