METHOD FOR FABRICATING GATE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A gate forming method of a semiconductor device is provided to restrain the increase of gate resistance due to the damage layer by compensating the damage layer generated during the doping of a polysilicon layer. CONSTITUTION: A polysilicon layer doped with the n-type impurity is formed by interposing a gate dielectric layer(120) on a semiconductor substrate(110). The p-type impurity is selectively doped on a part of the polysilicon. The oxidation process is implemented for oxidizing the surface of the polysilicon layer generated with a damage layer(132) during the p-type impurity doping. The damage layer is removed by etching the oxidized portion.