发明名称 |
CONTROL OF BEVEL ETCH FILM PROFILE USING PLASMA EXCLUSION ZONE RINGS LARGER THAN THE WAFER DIAMETER |
摘要 |
A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove the layer below the apex without removing all of the layer above the apex. |
申请公布号 |
KR20100138923(A) |
申请公布日期 |
2010.12.31 |
申请号 |
KR20107020393 |
申请日期 |
2009.03.10 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
FANG TONG;KIM YUNSANG;KIM, KEE CHAN;STOJAKOVIC GEORGE |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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