METHOD FOR FORMING INSULATING LAYER IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device insulating layer forming method is provided to improve the property of an insulation layer by controlling the distribution of nitride ion within the silicon oxynitride. CONSTITUTION: A semiconductor substrate(100) formed with the silicon oxide is loaded into a chamber. The plasma is ignited while being surrounded by inert gas by injecting inert gas into the chamber. The nitrogen gas is injected within the chamber in order to ignite the silicon oxide. The step of igniting the plasma is implemented in the temperature of 100 to 600 degree.