STRUCTURE OF POWER GRID FOR SEMICONDUCTOR DEVICES AND METHOD OF MAKING THE SAME

摘要

PURPOSE: A power grid structure for semiconductor devices and a manufacturing method thereof are provided to improve the overall performance and the reliability of a semiconductor device by preventing the electro migration in a joint or intersection area between the conductive stud and the conductive path. CONSTITUTION: A semiconductor device(202) is formed on a semiconductor substrate(201). A conductive stud(212) is formed within a dielectric layer(211). A conductive via(242) is formed to touch with the semiconductor stud. The conductive via comprises a conductive liner(241) covering the floor and the sidewalls.