| 摘要 |
PURPOSE: A mid-voltage(MV) semiconductor element array is provided to reduce the width of gates and the distances of elements in order to minimize the size of a chip by obtaining a switch circuit using the MV semiconductor element array. CONSTITUTION: A plurality of element isolation regions(110) is formed on a semiconductor substrate(100). A gate(130) is formed on the active region which is between the element isolation regions. Spacers(150) are formed at both sides of the gate. A source region(122) and a drain region are formed on the active region which is at both sides of the spacers. An insulating layer(160) is formed on the entire surface of the semiconductor substrate.
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