发明名称 METHOD OF OPERATION A NONVOLATILE MEMORY DEVICE
摘要 PURPOSE: An operation method is provided to improve the stability of a device by using reprogrammed cam cell data after reading out newly reprogrammed cam cell data. CONSTITUTION: A nonvolatile memory device includes a general cell part and a cam cell part. A fail check operation of a general cell part is executed(320). Cam cell data saved in the cam cell part is read out(360). The cam cell part is reprogrammed. The program, read-out, and erase operation of a device are executed by using the operation voltages of a device(370).
申请公布号 KR20100138543(A) 申请公布日期 2010.12.31
申请号 KR20090057126 申请日期 2009.06.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YANG, HAE JONG
分类号 G11C16/34;G11C15/00;G11C29/04 主分类号 G11C16/34
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