| 摘要 |
<p>PURPOSE: A flash memory device is provided to ensure the design flexibility of the flash memory device by increasing the integrity of a cell in a bit-line direction. CONSTITUTION: An element isolating film line(220) is formed on the active region of a semiconductor substrate. The element isolating film line is in parallel direction with a bit-line. Control gate lines(230) are formed in a vertical direction with the element isolating film line and in parallel direction with a word-line. A source region(240) and a drain region(250) are alternately arranged based on the control gate lines. A common source region is formed in the active region.</p> |
