| 摘要 |
PURPOSE: A method for removing a remaining charge on the surface of a wafer is provided to easily remove the remaining charge on a wafer by comprising power applied in a plasma process to have a downward incline. CONSTITUTION: A wafer is loaded on a chuck heater of a semiconductor processing device including a plasma generating unit(S210). A main process is performed on the wafer by using plasma(S220). The surface of the wafer is firstly processed with plasma by applying RF power to the plasma generating unit(S230). The surface of the wafer is secondly processed with plasma by applying RF power with continuously downward incline to the plasma generating unit(S240). The wafer is dechucked with a chuck heater(S250).
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