| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to improve a cross talk property and a saturation property of a photo diode by forming a boron doped layer between a semiconductor substrate and a photodiode. CONSTITUTION: An epi layer(20) is formed on a semiconductor substrate(10). A device isolation device is formed on the epi layer to define an active region on the semiconductor substrate. A photo diode(60) is formed in the epi layer of the active region. A barrier layer(40) is formed in the epi layer in contact with the lower side of the photo diode. The barrier layer is a boron doped layer.
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