| 摘要 |
The present invention relates to a single-electron transistor (SET) operating at room temperature and a method of manufacturing the same, and to be specific, to a single-electron transistor operating at room temperature and a method of manufacturing the same, which are capable of minimizing influence of the gate voltage on tunneling barriers and effectively controlling the electric potential of a quantum dot (QD), by forming the quantum dot using a trenched nano-wire structure and forming the gate to wrap most of the way around the quantum dot.
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