发明名称 |
GROUP-III NITRIDE BASED LASER DIODE AND METHOD FOR FABRICATING SAME |
摘要 |
A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers with a first mesa around the ridge. The first mesa is 0.1 to 0.2 microns above the second confinement heterostructure.
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申请公布号 |
US2010330720(A1) |
申请公布日期 |
2010.12.30 |
申请号 |
US20100880392 |
申请日期 |
2010.09.13 |
申请人 |
CREE, INC. |
发明人 |
DENBAARS STEVEN;NAKAMURA SHUJI;HANSEN MONICA |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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