Method of discharging bit-lines for a non-volatile semiconductor memory device performing a read-while-write operation

摘要

In a method of discharging bit-lines for a non-volatile semiconductor memory device performing a read-while-write operation. The method include discharging a global write bit-line to a ground voltage based on a write command within a first period. the method also includes maintaining the discharged voltage of the global write bit-line in the ground voltage during a second period.