| 摘要 |
In one embodiment, a method for removing a resist includes irradiating, with an UV light having a wavelength of less than about 240 nm, a structure having a resist on a pattern surface in an atmosphere having oxygen. The resist is used as a mask as it remains above the pattern after the pattern has been transferred to a magnetic recording medium surface having a magnetic film thereon, and the irradiating is performed during production of the magnetic recording medium. In another embodiment, a method for forming a magnetic recording medium includes applying a resist to a surface of a magnetic film above a substrate, curing the resist by irradiating the resist with first UV light to form a pattern, transferring the pattern to the magnetic film using the pattern, and removing the resist by irradiating using second UV light having a shorter wavelength in an atmosphere including oxygen.
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