发明名称 Memory module for preventing electrostatic discharge (ESD) and system including the same
摘要 Disclosed is a memory module having an ElectroStatic Discharge (ESD) prevention structure. The memory module may include a printed circuit board, a first circuit pattern on the printed circuit board, and a second circuit pattern on the printed circuit board. The second circuit pattern may be configured to discharge static electricity introduced to the memory module from outside the memory module. In addition, the second circuit pattern is not connected to the first circuit pattern. Disclosed also is a system that includes the memory module. The system may include a main board, a socket on the main board, and the memory module.
申请公布号 US2010328835(A1) 申请公布日期 2010.12.30
申请号 US20100662104 申请日期 2010.03.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN YOUNG JOON
分类号 H05F3/02 主分类号 H05F3/02
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