发明名称 |
GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
There is provided a group III nitride semiconductor epitaxial substrate which has a suppressed level of threading dislocation in the vertical direction and excellent crystal quality, the group III nitride semiconductor epitaxial substrate including a substrate (1) for growing an epitaxial film; and an ELO layer (4) having a composition of AlxGa1-xN (0≰x≰1) formed either on top of the substrate (1) or on top of a group III nitride layer (2) formed on top of the substrate (1), wherein the ELO layer (4) is a layer formed by using a mask pattern (3), which is composed of carbon and is formed either on top of the substrate (1) or on top of the group III nitride layer (2).
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申请公布号 |
US2010327228(A1) |
申请公布日期 |
2010.12.30 |
申请号 |
US20090866147 |
申请日期 |
2009.01.28 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
BANDO AKIRA;AMANO HIROSHI |
分类号 |
C09K11/64;C23C16/04;C23C16/34;C30B25/04;C30B29/38;H01L21/20;H01L21/205;H01L31/10;H01L33/16;H01L33/32;H01S5/02 |
主分类号 |
C09K11/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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