发明名称 |
Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same |
摘要 |
An interlayer is used to reduce Fermi-level pinning phenomena in a semiconductive device with a semiconductive substrate. The interlayer may be a rare-earth oxide. The interlayer may be an ionic semiconductor. A metallic barrier film may be disposed between the interlayer and a metallic coupling. The interlayer may be a thermal-process combination of the metallic barrier film and the semiconductive substrate. A process of forming the interlayer may include grading the interlayer. A computing system includes the interlayer. |
申请公布号 |
US2010327377(A1) |
申请公布日期 |
2010.12.30 |
申请号 |
US20090459254 |
申请日期 |
2009.06.26 |
申请人 |
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发明人 |
DEWEY GILBERT;MUKHERJEE NILOY;METZ MATTHEW;KAVALIEROS JACK T.;ZELICK NANCY M.;CHAU ROBERT S. |
分类号 |
H01L29/78;H01L21/31;H01L21/3205;H01L29/06 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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