| 摘要 |
A method of programming a nonvolatile memory device includes inputting program data to page buffers; performing a program operation and a program verification operation until threshold voltages of memory cells included in a selected page reach a target level according to the program data; when the threshold voltages of the memory cells reach the target level, performing an over-program verification operation to determine over-programmed memory cells in the memory cells; and making a determination of whether error checking and correction (ECC) processing for the over-programmed memory cells is feasible.
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