SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME

摘要

Improved control over formation of low k air gaps in interlayer insulating films is achieved by plasma pretreatment of the region of the insulating film to be removed. The intended air gap region is exposed through a mask while the film region to be preserved is shielded by the mask. The intended air gap region is then exposed to a plasma so as to render it more susceptible to removal in a subsequent treatment. One or more Cu interconnects are embedded in both regions of the insulator film. The insulator film in the intended air gap region is then selectively removed to form air gaps adjacent a Cu interconnect in that region.