MAGNETIC SHIFT REGISTER MEMORY IN STACK STRUCTURE

摘要

A magnetic shift register memory in stack structure includes magnetic shift registering layers for forming an unit of stack structure. Each registering layer has multiple magnetic domains and each domain has a magnetization direction corresponding to a stored data. The two adjacent magnetic shift registering layers respectively have an upper magnetic domain and a lower magnetic domain forming a coupling region. By a coupling structure, the lower magnetic domain and the upper magnetic domain have the same stored data. A driving current unit is coupled to the magnetic shift registering layers for respectively providing a driving current in a predetermined direction to the magnetic shift registering layers. As a result, the stored data in the magnetic domains of the magnetic shift registering layers is shifted in a direction from a foremost registering layer to a last registering layer of the magnetic shift registering layers via the coupling structure.