发明名称 Mono-Domain Hexagonal Arrays of Nanopillars and Processes For Preparing the Same
摘要 The present invention relates to nanopillar arrays that may have relatively large dimensions and relatively large interpillar distances. The present invention also relates to methods of forming the same. In some embodiments of the invention, methods of forming hexagonal nanopillar arrays include forming a base comprising aluminum; forming a hexagonal pattern of pits in the aluminum; anodizing the aluminum to form aluminum oxide comprising a primary hexagonal nanopore array at the positions of the pits in the aluminum; depositing a conductive material into the nanopores of the primary hexagonal nanopore array; and removing the mask and the aluminum oxide to provide the hexagonal nanopillar array.
申请公布号 US2010326710(A1) 申请公布日期 2010.12.30
申请号 US20100825897 申请日期 2010.06.29
申请人 ZHANG GUIGEN 发明人 ZHANG GUIGEN
分类号 H05K1/09;B32B3/30;B32B15/20;B44C1/22;C25D5/02;C25D7/00 主分类号 H05K1/09
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