PROCESS FOR PRODUCING SI(1-V-W-X)CWALXNV BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-V-W-X)CWALXNV BASE MATERIAL, AND EPITAXIAL WAFER

摘要

Si (l-v-w-x) C w Al x N v crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si (l-v-w-x) C w Al x N v substrate, a method for manufacturing an epitaxial wafer, a Si (l-v-w-x) C w Al x N v substrate, and an epitaxial wafer are provided. A method for manufacturing a Si (l-v-w-x) C w Al x N v substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si (l-v-w-x) C w Al x N v layer 12 (0 < v <1,0<w<1,0<x<1,and0<v+w+x<1) is then grown on the Si substrate 11 by a pulsed laser deposition method.