发明名称 NANOWIRE WRAP GATE DEVICES
摘要 <p>The present invention provides a semiconductor device comprising at least a first semiconductor nanowire (105) having a first lengthwise region (121) of a first conductivity type, a second lengthwise region (122) of a second conductivity type, and at least a first wrap gate electrode (111) arranged at the first region (121) of the nanowire (105) in order to vary the charge carrier concentration in the first lengthwise region (121) when a voltage is applied to the first wrap gate electrode (111). Preferably a second wrap gate electrode (112) is arranged at the second lengthwise region (122). Thereby tuneable artificial junctions (114) can be accomplished without substantial doping of the nanowire (105).</p>
申请公布号 KR20100137566(A) 申请公布日期 2010.12.30
申请号 KR20107025532 申请日期 2009.04.15
申请人 QUNANO AB 发明人 OHLSSON JONAS;SAMUELSON LARS;LIND ERIK
分类号 H01L29/06;H01L29/12;H01L29/775 主分类号 H01L29/06
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