| 摘要 |
The present invention relates to a crystal element manufacturing method for manufacturing a plurality of crystal elements at a wafer level, and to a crystal resonator manufactured by this method. The method is comprised when the frequencies of the crystal elements are adjusted by adjusting the thickness of a crystal wafer that constitutes the crystal element in two stages by partial wet etching, the thicknesses of a large number of the step sections are coarse-adjusted in a first stage by collectively subjecting the step sections to partial wet etching, and then variations in the thicknesses of each group of a small number of the step sections are fine-adjusted in a second stage by collectively subjecting the step sections to partial wet etching. Alternatively, variations in the thicknesses of a small number of the step sections are coarse-adjusted and made uniform by means of partial wet etching, and then in a second stage, the thicknesses of a group of a plurality of the step sections having equal thicknesses are fine-adjusted by collectively subjecting the step sections to partial wet etching. Step sections having different areas are respectively formed on both of the front and back surfaces of a crystal wafer; at a crystal wafer level, these step sections are first collectively subjected to partial wet etching and thereby coarse-adjusted; then the thickness of each of the step sections is individually fine-adjusted by means of partial wet etching; and thereby the tact (the amount of operation time) required in partial wet etching is reduced.
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