| 摘要 |
A method of making a memory cell or magnetic element by using two hard masks. The method includes first patterning a second hard mask to form a reduced second hard mask, with a first hard mask being an etch stop for the patterning process, and then patterning the first hard mask to form a reduced first hard mask by using the reduced second hard mask as a mask and using an etch stop layer as an etch stop. After patterning both hard masks, then patterning a functional layer by using the reduced first hard mask as a mask. In the resulting memory cell, the first hard mask layer is also a top lead, and the diameter of the first hard mask layer is at least essentially the same as the diameter of the etch stop layer, the adhesion layer, and the functional layer.
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