发明名称 |
CONTACT OPTIMIZATION FOR ENHANCING STRESS TRANSFER IN CLOSELY SPACED TRANSISTORS |
摘要 |
By appropriately designing the geometric configuration of a contact level of a sophisticated semiconductor device, the tensile stress level of contact elements in N-channel transistors may be increased, while the tensile strain component of contact elements caused in the P-channel transistor may be reduced.
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申请公布号 |
US2010327367(A1) |
申请公布日期 |
2010.12.30 |
申请号 |
US20100823438 |
申请日期 |
2010.06.25 |
申请人 |
RICHTER RALF;FROHBERG KAI;SCHUEHRER HOLGER |
发明人 |
RICHTER RALF;FROHBERG KAI;SCHUEHRER HOLGER |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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