UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUSING A METAL SPECIES PRIOR TO GATE PATTERNING,申请号US20100787461-传众专利搜索

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发明名称	UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUSING A METAL SPECIES PRIOR TO GATE PATTERNING
摘要
申请公布号	US2010327373(A1)	申请公布日期	2010.12.30
申请号	US20100787461	申请日期	2010.05.26
申请人	CARTER RICHARD;GRAETSCH FALK;TRENTZSCH MARTIN;BEYER SVEN;REIMER BERTHOLD;BINDER ROBERT;BAYHA BORIS	发明人	CARTER RICHARD;GRAETSCH FALK;TRENTZSCH MARTIN;BEYER SVEN;REIMER BERTHOLD;BINDER ROBERT;BAYHA BORIS
分类号	H01L29/78;H01L21/3205	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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