| 摘要 |
To provide an EUV mask of which a decrease in the contrast of reflected light at the mask pattern boundary, particularly a decrease in the contrast of reflected light at the boundary on the mask pattern outer edge, is suppressed, and an EUV mask blank to be used for production of the EUV mask. A reflective mask blank for EUV lithography, comprising: a substrate, and a reflective layer to reflect EUV light, and an absorber layer to absorb EUV light, formed in this order over the substrate, a step on at least a part of the substrate being provided between a first portion where the absorber layer is removed at the time of patterning, and a second portion where the absorber layer is not removed at the time of patterning, adjacent to the first portion where the absorber layer is removed
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