| 摘要 |
Provided is a method for manufacturing a silicon epitaxial wafer by growing an epitaxial layer by placing a silicon substrate on a susceptor. The method includes at least a step of forming a silicon oxide film entirely on the rear surface of the silicon substrate; a step of removing the silicon oxide film formed at least on an edge section of the silicon substrate; and a step of placing the silicon substrate on the susceptor with the silicon oxide film in between. An epitaxial layer is grown on the silicon substrate, while holding the silicon substrate by the susceptor with the silicon oxide film in between. Thus, the silicon epitaxial wafer by which generation of particles can be reduced in a device manufacturing process and a method for manufacturing such silicon epitaxial wafer are provided.
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