发明名称 Ion Source Cleaning End Point Detection
摘要 In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning.
申请公布号 US2010327159(A1) 申请公布日期 2010.12.30
申请号 US20090492894 申请日期 2009.06.26
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 PLATOW WILHELM P.;BASSOM NEIL J.;KURUNCZI PETER F.;PEREL ALEXANDER S.;CHANEY CRAIG R.
分类号 H01J37/317;H01J37/05;H01J49/26 主分类号 H01J37/317
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