发明名称 |
PLASMA PROCESSING APPARATUS AND METHOD |
摘要 |
The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor. |
申请公布号 |
KR20100137565(A) |
申请公布日期 |
2010.12.30 |
申请号 |
KR20107025494 |
申请日期 |
2009.04.09 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
FURUTA GAKU;CHOI, YOUNG JIN;CHOI, SOO YOUNG;PARK, BEOM SOO;WHITE JOHN M.;ANWAR SUHAIL;TINER ROBIN L. |
分类号 |
H01L21/205;H01L31/18 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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