发明名称 High Aspect Ratio Microstructures
摘要 A method for forming a high aspect ratio microstructure (20) comprises: a) forming on a conductive surface (4) of a carrier substrate (3) one or more dielectric structures (6) to create a mandrel (7); b) forming masking material (8) by electrodepositing on exposed areas of the conductive surface of the mandrel one or more metal structures; c) forming a composite structure (18) by taking a photopolymer structure comprising a substrate (12) having thereon an electromagnetic radiation-sensitive photopolymer of either a positive tone or a negative tone (14), the photopolymer having a thickness substantially equal to the desired height of the microstructure to be formed, and adhering the photopolymer to the masking material (8), wherein the masking material is opaque to the electromagnetic radiation; d) removing the carrier (3); e) exposing the photopolymer (14) to electromagnetic radiation so as to irradiate regions of the photopolymer corresponding to the one or more dielectric structures (6) and substantially not to irradiate regions of the photopolymer corresponding to the one or more metal structures (8); and f) developing to selectively remove those portions of the photopolymer exposed to the radiation if the photopolymer has a positive tone; or to selectively remove the unexposed portions of the photopolymer if the photopolymer has a negative tone, thereby forming a high aspect ratio microstructure (20). The invention also provides a composite structure (18) for use in the method.
申请公布号 US2010330502(A1) 申请公布日期 2010.12.30
申请号 US20080865506 申请日期 2008.04.24
申请人 HEWLETT-PACKARD DEVELOPMENT COMPNY, L.P. 发明人 RUDIN JOHN CHRISTOPHER
分类号 G03F7/20;G03F1/22;G03F7/004 主分类号 G03F7/20
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