| 发明名称 |
METHODS OF FORMING LAYERS OF ALPHA-TANTALUM |
| 摘要 |
A method of forming a layer of alpha-tantalum on a substrate including the steps of depositing a layer of titanium nitride on a substrate; and depositing a layer of alpha-tantalum on the layer of titanium nitride, wherein the deposition of the alpha-tantalum is carried out at temperatures below about 300° C.
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| 申请公布号 |
US2010330800(A1) |
申请公布日期 |
2010.12.30 |
| 申请号 |
US20090492206 |
申请日期 |
2009.06.26 |
| 申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
IVANOV IVAN PETROV;TIAN WEI;KAMARAJUGADDA MALLIKA;ANDERSON PAUL E. |
| 分类号 |
H01L21/768;B05D1/36;C23C14/24;C23C14/34;C23C14/38;C23C16/50;C23C16/515 |
主分类号 |
H01L21/768 |
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