发明名称 |
METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE |
摘要 |
A method of programming a nonvolatile memory device comprises performing a first program operation on first memory cells and second memory cells so that threshold voltages of the first and second memory cells have a first reference level lower than a first target level, the first memory cells having the first target level as a first target level, and the second memory cells having a second target level higher than the first target level as a second target level; performing a second program operation on the second memory cells so that the threshold voltages of the second memory cells have a second reference level lower than the second target level; and performing a third program operation on the first and second memory cells to have the respective target levels.
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申请公布号 |
US2010329022(A1) |
申请公布日期 |
2010.12.30 |
申请号 |
US20100827754 |
申请日期 |
2010.06.30 |
申请人 |
BAIK SEUNG HWAN;LEE JU YEAB |
发明人 |
BAIK SEUNG HWAN;LEE JU YEAB |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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