| 摘要 |
The invention provides a method of manufacturing a semiconductor device and a sputtering apparatus which improve the composition of a film formed by a metal and a reactive gas without increasing the number of steps. An embodiment includes the steps of: placing a substrate on a substrate holder in a process chamber; and sputtering a target in the process chamber by applying electric power thereto while feeding a first reactive gas and a second reactive gas having higher reactivity than that of the first reactive gas into the process chamber, to form a film containing a target material on the substrate. The step of forming a film is conducted by feeding at least the first reactive gas from a first gas feed opening formed near the target, and by feeding the second reactive gas from a second gas feed opening formed at a position with the distance from the target larger than that of the first gas feed opening.
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