摘要 |
The present invention relates to a solar cell and a fabrication method thereof, whereby the method includes doping a silicon substrate having a first conductive type impurity with a second conductive type impurity, the second conductive type impurity being opposite to the first conductive type impurity, and thereby forming an emitter layer at a front surface part of the silicon substrate; forming an antireflection film on the emitter layer; forming a front electrode on the antireflection film; forming a rear electrode on a rear surface of the silicon substrate; and forming a back surface field layer at a rear surface part of the silicon substrate, the back surface field layer having a concentration of the first conductive type impurity that is higher than that of the silicon substrate, the back surface field layer having a different concentration of the second conductive type impurity from that of the emitter layer.
|