| 摘要 |
<p>PURPOSE: A nonvolatile memory device manufacturing method is provided to improve the property of a nonvolatile memory device by forming a selection gate with a uniform length after etching a conductive material layer in order to form a selection gate by using a mask pattern. CONSTITUTION: A semiconductor substrate(200) is made of silicon. A non-conductive material layer is formed into a nitride layer by a chemical vapor deposition process. A second insulating layer is formed into an oxide layer by the chemical vapor deposition process. A second conductive material layer is formed by using polysilicon.</p> |
