| 摘要 |
A memory device that includes multiple blocks of static random access memory (SRAM), which each have a standby mode and an active operating mode, is described. During the active operating mode, a selection circuit couples a higher voltage from a first power-signal line and a power-supply circuit to a given block of SRAM, and during the standby mode the selection circuit couples a lower voltage from a second power-signal line to the given block of SRAM. Note that a regulator circuit regulates the lower voltage on the second power-signal line by selectively opening or closing a first switch between the first power-signal line and the second power-signal line. Furthermore, a recycling circuit selectively opens a second switch between the first switch and the first power-signal line when the block of SRAM transitions from the active operating mode to the standby mode, thereby transferring charge from the block of SRAM to other blocks of SRAM.
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