| 摘要 |
PURPOSE: An IGZO system oxide material, and a producing method thereof are provided to obtain a single-crystal phase IGZO system oxide material by plasticizing at the optimum plasticizing condition. CONSTITUTION: An IGZO system oxide material is marked with a composition expression of In2-xGaxZnO4-delta, and formed with a single-crystal phase including an YbFe2O4 type crystalline structure. In the composition expression, x is bigger than 0.75 and smaller than 1.10. A producing method of the IGZO system oxide material comprises a step of plasticizing mixed materials containing In, Ga, and Zn. |
