发明名称 |
P-CONTACT LAYER FOR A III-P SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1-x p-contact layer, wherein x<0.45. A first metal contact is in direct contact with the GaAsxP1-x p-contact layer. A second metal contact is electrically connected to the n-type region. The first and second metal contacts are formed on a same side of the semiconductor structure.
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申请公布号 |
US2010327299(A1) |
申请公布日期 |
2010.12.30 |
申请号 |
US20090494988 |
申请日期 |
2009.06.30 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;PHILIPS LUMILEDS LIGHTING COMPANY, LLC |
发明人 |
CHUNG THEODORE;MUNKHOLM ANNELI |
分类号 |
H01L33/00;H01L21/20 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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