METHOD FOR PRODUCTION OF PURIFIED SILICON

摘要

A standard temperature gradient (T0) and a standard solidification rate (R0) which meet the formula (1) are determined in advance based on C10max and Y0. k=[K1×Ln(R0)+K2]×[K3×exp[K4×R0×(K5×C2+K6)]]×[K7×T0+K8]−K9 (1) wherein k represents a coefficient selected from a range from 0.9 time to 1.1 times an aluminum effective distribution coefficient (k′) so measured as to meet the formula (2): C10max=k′×C2×(1−Y0)k′-1 (2) wherein k′ represents analuminum effective distribution coefficient; C2 represents the concentration of aluminum in a silicon molten solution raw material.